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ZXMS6001N3 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET
Summary
Continuous drain source voltage VDS = 60V On-state resistance Max nominal load current (a) Min nominal load current (c) Clamping Energy 675m 1.1A (VIN = 5V) 0.7A (VIN = 5V) 550mJ
Description
Low input current self protected low side MOSFET intended for Vin=5V applications. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch.
Note:
The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is S recommended for best thermal performance.
S D IN
Features
* * * * * * * Short circuit protection with auto restart Over voltage protection (active clamp) Thermal shutdown with auto restart Over-current protection Input protection (ESD) Load dump protection (actively protects load) Low input current
SOT223
Ordering information
Device ZXMS6001N3TA Package SOT223 Part mark ZXMS6001 Reel size (inches) 7 Tape width (mm) 12 embossed Quantity per reel 1,000
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ZXMS6001N3
Functional block diagram
D
Over Voltage Protection
IN
Human body ESD protection Over current protection Logic Over temperature protection
dV/dt limitation
S
Applications and information
* * * * * Especially suited for loads with a high in-rush current such as lamps and motors. All types of resistive, inductive and capacitive loads in switching applications. C compatible power switch for 12V and 24V DC applications. Automotive rated. Replaces electromechanical relays and discrete circuits.
Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low Vds, in order not to compromise the load current during normal operation. The design max DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the products ability to self protect itself at low VDS.
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Absolute maximum ratings
Parameter Continuous Drain-Source Voltage Drain-Source Voltage for short circuit protection VIN = 5V Continuous Input Voltage Peak Input Voltage Continuous Input Current -0.2V=VIN=10V VIN<-0.2V or VIN>10V Operating Temperature Range Storage Temperature Range Power Dissipation at TA =25C(a) Power Dissipation at TA =25C(c) Continuous Drain Current @ VIN=5V; TA=25C(a) Continuous Drain Current @ VIN=5V; TA=25C(c) Continuous Source Current (Body Diode)(a) Pulsed Source Current (Body Diode)(b) Unclamped single pulse inductive energy Load dump protection Electrostatic Discharge (Human Body Model) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VDS VDS(SC) VIN VIN IIN No limit | IIN | 2 Tj, Tstg PD PD ID ID IS IS EAS VLoadDump VESD -40 to +150 -55 to +150 1.5 0.6 1.1 0.7 2.0 3.3 550 80 4000 E 40/150/56 C C W W A A A A mJ V V Limit 60 36 -0.2 ... +10 -0.2 ... +20 Unit V V V V mA
Thermal resistance
Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Symbol R JA R JA R JA Value 83 45 208 Unit C/W C/W C/W
NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight copper. Allocation of 6cm2 copper 33% to source tab and 66% to drain pin with source tab and drain pin electrically isolated. (b) For a device surface mounted on FR4 board as (a) and measured at t<=10s. (c) For a device surface mounted on FR4 board with the minimum copper required for electrical connections.
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ZXMS6001N3
Recommended operating conditions
The ZXMS6001 is optimized for use with C operating from 5V supplies. Symbol Description VIN TA VIH VP Input voltage range Ambient temperature range High level input voltage for MOSFET(d) Peripheral supply voltage (voltage to which load is referred) Min 0 -40 4 Max 6 125 6 60 Units V C V V
Electrical characteristics (at Tamb = 25C unless otherwise stated).
Parameter Static Characteristics Drain-Source Clamp Voltage Off state Drain Current Off state Drain Current VDS(AZ) IDSS IDSS 1 IIN IIN RDS(on) RDS(on) ID(LIM) ton toff -dVDS/dton DVDS/dton 1 60 70 0.1 3 1.8 150 335 1 520 1.8 27 26 1.4 1.2 500 2 675 3 40 40 10 10 75 3 15 2.5 V A A V A A m A s s V/ s V/ s ID=10mA VDS=12V, VIN=0V VDS=32V, VIN=0V VDS=VGS, ID=10mA VIN=+3V VIN=+5V, all circumstances VIN=3V, ID=0.1A VIN=5V, ID=0.7A VIN=5V, VDS>5V RL=22, VIN=0 to 5V, VDD=12V RL=22, VIN=5V to 0V, VDD=12V RL=22, VIN=0 to 5V, VDD=12V RL=22, VIN=5V to 0V, VDD=12V Symbol Min Typ Max Unit Conditions
Input Threshold Voltage(d) VIN(th) Input Current Input Current Static Drain-Source On-State Resistance Static Drain-Source On-State Resistance Current Limit(e) Dynamic Characteristics Turn-On Time (VIN to 90% ID) Turn-Off time (VIN to 90% ID) Slew Rate On (70 to 50% VDD) Slew Rate Off (50 to 70% VDD)
NOTES: (d) Recommended input voltage range over which protection circuits function as specified. (e) The drain current is limited to a reduced value when Vds exceeds a safe level
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ZXMS6001N3
Parameter Protection Functions (f) Minimum input voltage for over temperature protection Maximum input voltage for over temperature protection Thermal Overload Trip Temperature Thermal hysteresis Unclamped single pulse inductive energy Tj=25C Unclamped single pulse inductive energy Tj=150C Inverse Diode Source drain voltage
f
Symbol VPROT
Min 4
Typ 3.5
Max
Unit V
Conditions Ttrip>150C
VPROT
7
6
V
Ttrip>150C
TJT
150
175 8
C C mJ ID(ISO)=0.7A, VDD=32V
EAS
550
EAS
200
mJ
ID(ISO)=0.7A, VDD=32V
VSD
1
V
VIN=0V, -ID=1.4A
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation.
350
3
VDS = 13.5V VIN = 5V Single Pulse = 300s
IIN - Input Current (A)
250 200 150 100 50 0 0 1 2 3 4 5
IdLim Current Limit (A)
300
2
VIN = 5V
1
VDS = 12V
0 -40 -20
0
20
40
60
80 100 120 140
VIN - Input Voltage (V)
Input Current v Input Voltage
Temperature (C) Current Limit v Temperature
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Application information
The current-limit protection circuitry is designed to de-activate at low Vds to prevent the load current from being unnecessarily restricted during normal operation. The design max DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry (see graph page 8 'typical output characteristic'). This does not compromise the products ability to self protect at low VDS. The overtemperature protection circuit trips at a minimum of 150C. So the available package dissipation reduces as the maximum required ambient temperature increases. This leads to the following maximum recommended continuous operating currents.
Minimum copper area characteristics
For minimum copper condition as described in note (c) Max Ambient Temperature TA Maximum continuous current VIN=5V 720 575 520 320
25C at Vin=5V 70C at Vin=5V 85C at Vin=5V 125C at Vin=5V
Max Power Dissipation (W)
RDS(on)
ID Drain Current (A)
Limited
0.6
see note (c) - Minimum Copper
1
100m
DC 1s 100ms Single Pulse T amb=25C 10ms 1ms
0.4
10m
0.2
1m
1
10
100
0.0
0
20
40
60
80
100 120 140 160
VDS Drain-Source Voltage (V)
Temperature (C)
Safe Operating Area
Derating Curve
Thermal Resistance (C/W)
200 150
Maximum Power (W)
Tamb=25C
100
Single Pulse Tamb=25C
D=0.5
100 50
D=0.2 Single Pulse D=0.05 D=0.1
10
1 100 1m 10m 100m 1 10 100 1k
0 100
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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ZXMS6001N3
Large copper area characteristics
For large copper area as described in note (a) Max Ambient Temperature TA Maximum continuous current VIN=5V 1140 915 825 510
25C at Vin=5V 70C at Vin=5V 85C at Vin=5V 125C at Vin=5V
ID Drain Current (A)
1
Limited
Max Power Dissipation (W)
RDS(on)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160
See Note (a) 6cm Copper
2
DC 1s 100ms 10ms Single Pulse 1ms T amb=25C
100m
10m 1 10 100
VDS Drain-Source Voltage (V)
Temperature (C)
Safe Operating Area
90
Derating Curve
Thermal Resistance (C/W)
80 70 60 50 40 30 20 10 0 100
Maximum Power (W)
T amb=25C
Single Pulse T amb=25C
100
D=0.5
10
D=0.2
Single Pulse D=0.05 D=0.1
1m
10m 100m
1
10
100
1k
1 100
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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ZXMS6001N3
3
Current limit inactive
1000
T = 25C
Current limit active
RDS(on) On-Resistance (m)
ID Drain Current (A)
800 600 400 200 0 -50
VIN = 5V ID = 0.7A
2
6V 5V 4V
1
3V VIN
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
-25
0
25
50
75
100 125 150
VDS Drain-Source Voltage (V)
TJ Junction Temperature (C)
Typical Output Characteristic
RDS(on) On-Resistance ()
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0
On-state Resistance vs Temperature
1.4
VIN = VDS
T J = 25C
Normalised VIN(th)
ID = 0.7A
1.2 1.0 0.8 0.6 0.4 -50
ID = 1mA
-25
0
25
50
75
100 125 150
VIN Input Voltage (V)
TJ Junction Temperature (C)
On-Resistance vs Input Voltage
10
Threshold Voltage vs Temperature
12
RD = 22 RIN = 25
IS Source Current (A)
TJ = 150C
10
VDS
Voltage (V)
1
8 6 4 2
VIN
0.1
TJ = 25C
0.01
0.4 0.6 0.8 1.0 1.2 VSD Diode Forward Voltage (V)
0 -20
0
20 40 60 80 100120140160
Time (s)
Source-Drain Diode Forward Voltage
Switching Speed
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Package outline - SOT223
Dim. A A1 A2 b b2 C
Millimeters Min. 0.02 1.55 0.66 2.90 0.23 Max. 1.80 0.10 1.65 0.84 3.10 0.33 -
Inches Min. 0.0008 0.0610 0.026 0.114 0.009 Max. 0.071 0.004 0.0649 0.033 0.122 0.013
Dim. D e e1 E E1 L
Millimeters Min. 6.30 Max. 6.70
Inches Min. 0.248 Max. 0.264
2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 -
0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 -
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXMS6001N3
Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview" Future device intended for production at some point. Samples may be available "Active" Product status recommended for new designs "Last time buy (LTB)" Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs" Device is still in production to support existing designs and production "Obsolete" Production has been discontinued Datasheet status key: "Draft version" This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version" This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue" This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Zetex sales offices Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
(c) 2008 Published by Zetex Semiconductors plc
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